Abstract: In this article, we present a symmetric surface-potential-based model for dynamic depletion (DD) device operation of silicon-on-insulator (SOI) FETs for RF and analog IC design applications.
Will Kenton is an expert on the economy and investing laws and regulations. He previously held senior editorial roles at Investopedia and Kapitall Wire and holds a MA in Economics from The New School ...
Abstract: In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley ...
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