Abstract: We report an 850 nm surface-illuminated InGaAs modified uni-travelling-carrier photodiode (MUTC-PD) with distributed Bragg reflector (DBR) bottom mirror. By adopting InGaAs as the absorber, ...
Phlux Technology, a manufacturer of avalanche photodiode infrared sensors, will exhibit its Aura family of Noiseless InGaAs ...
Abstract: High-frequency sine wave gating (SWG) InGaAs/InP single-photon detectors (SPDs) are widely used for synchronous near-infrared single-photon detection. For practical use, the size of SPD is ...
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